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| BFG 19S NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 19S Maximum Ratings Parameter Marking BFG19S 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB 75 C 1) Ptot Tj TA Tstg Value 15 20 20 3 100 12 1 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS mA W C 75 K/W 1 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 A ICBO 100 nA ICES 100 A V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Oct-26-1999 BFG 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available F) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IC = 70 mA, VCE = 8 V, ZS = ZL= 50 , f = 900 MHz IP3 |S21e|2 11 5 35 13.5 8 Gma F 2.5 4 Ceb 4.6 Cce 0.4 Ccb 0.85 1.4 fT 4 5.5 typ. max. Unit GHz pF dB dBm 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999 BFG 19S Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 1200 mW 1000 900 TS P tot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Oct-26-1999 BFG 19S Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 2.6 pF 6.0 GHz 5V 3V 2V 2.2 2.0 1.8 5.0 4.5 C cb 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 4 8 12 16 V fT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 mA 0.7V 1V 22 20 40 60 80 120 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 14 10V 5V dB 3V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 10 dB 10V 5V 3V 10 6 2V G 8 1V G 4 1V 6 2 4 0.7V 0 0.7V 2 0 20 40 60 80 mA 120 -2 0 20 40 60 80 mA 120 IC IC 5 Oct-26-1999 BFG 19S Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 14 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz IC=70mA dB 0.9GHz 40 dBm 0.9GHz 8V 5V 10 G 1.8GHz IP 3 30 3V 8 25 6 1.8GHz 2V 20 4 1V 2 15 0 0 2 4 6 8 V 12 10 0 20 40 60 80 mA 120 VCE IC Power Gain Gma , Gms = f(f) VCE = Parameter 36 dB Power Gain |S21|2= f(f) V CE = Parameter 32 IC=70mA dB IC =70mA 28 24 20 G S21 24 20 16 12 16 8 12 8 10V 4 10V 0 -4 -8 0.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 2V 1V 0.7V GHz 3.5 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f f 6 Oct-26-1999 |
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